41T06B-BW Datasheet, PDF (1/5 Pages) Nell Semiconductor Co., Ltd – TRIACs, 40A Sunbberless

SEMICONDUCTOR
41T Series RRooHHSS
TRIACs, 40A
Sunbberless
FEATURES
High current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-3P package
High commutation capability
41T series are UL certified (File ref: E320098)
Packages are RoHS compliant
APPLICATIONS
The snubberless concept offer suppression of RC
network and it is suitable for applications such as
on/off function in static relays, heating regulation,
induction motor starting circuits, phase control
operation in light dimmers, motor speed controllers,
and silmilar.
Due to their clip assembly techinque, they provide
a superior performance in surge current handling
capabilities.
By using an internal ceramic pad, the 41T series
provides voltage insulated tab (rated at 2500VRMS)
complying with UL standards.
MAIN FEATURES
SYMBOL
I_T(RMS)
VALUE
40
UNIT
A
V_DRM/V_RRM
600 to 1600
V
I_GT(Q1)
35 to 50
mA
A2
A1 _{A2 G}
TO-3P (non-Insulated)
(41TxxB)
A1 _{A2 G}
TO-3P (Insulated)
(41TxxBI)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current (full sine wave)
I_T(RMS)
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Peak gate power dissipation (tp = 20µs)
Average gate power dissipation
Storage temperature range
Operating junction temperature range
I_TSM
2
It
dI/dt
I_GM
P_GM
P_G(AV)
T_stg
T_j
TEST CONDITIONS
TO-3P
T_c = 95ºC
TO-3P insulated
T_c = 80ºC
F =50 Hz
t = 20 ms
F =60 Hz
t = 16.7 ms
tp = 10 ms
VALUE
40
400
420
800
F =100 Hz
T_j =125ºC
50
T_p =20 µs
T_j =125ºC
T_j =125ºC
T_j =125ºC
4
10
1
- 40 to + 150
- 40 to + 125
UNIT
A
A
A²s
A/µs
A
W
ºC
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