4100PT Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – Center amplifying gate

SEMICONDUCTOR
4100PT Series RRooHHSS
Phase Control Thyristors
Features
1. Center amplifying gate.
2. Metal Case With Ceramic insulator.
3. Typical application
DC motor control
Controlled DC power supplies
AC controllers
E TYPE
35 (1.48)
MAX.
73.2 (2.88)DIA.
MAX.
99 (3.90)DIA.
MAX.
Ordering code
4100
PT
12
E
0
20
(1)
(2)
(3)
(4)
(5)
(1) Maximum average on-state current , A
(2) For Phase Control Thyristor
(3) Voltage code , code x 100 = VRRM / VDRM
(4) package style : A , B , C , D ,E ,EX for Disc Type
(5) Terminal types
0 - for eyelet
All dimensions in millimeters ( inches )
Electrical Characteristics
Symbol
Parameter
IT(AV) Mean on-state current
IT(RMS) Max. RMS on-state current
Condition
180 half sine wave , 50Hz
Double side cooled , Ths = 55 C
Double side cooled , Ths=25 C
Value
Min. Type Max. ^Unit
4100 A
8161 A
VRRM
VDRM
ITSM
I
2
t
VO
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Surge on-state current
For fusing coordination
Threshold voltage
VDRM & VRRM tp=10ms
VDsM _& VRsM = VDRM & VRRM + 100V
800
10 ms half sine wave
VR = 0.6VRRM
1200 V
60 KA
26
20.5 A sx10
0.85 V
rt
VTM
IH
diT/dt
IRRM
IDRM
dv/dt
PG
IGT
VGT
VGD
Tj
On-state slope resistance
Max. Forward voltage drop
ITM=3000A
Holding current
Tj=25 C
Cirtical rate of rise of turned-on current
Repetitive peak reverse current
Cirtical rate of rise of off-state voltage
Mean forward gate power
Gate trigger current
Gate trigger voltage
DC voltage notto trigger
Max.operating temperaturerange
VVDR==VVDRRRMM
VDM=0.67 VDRM
VA=12V , IA=1A
At76% VDRM , Tj=Tj MAX
1000
- 40
0.07 mΩ
1.55 V
1000 mA
150 A/^μs
200 mA
V/^μ s
5
W
300 mA
3.0 V
0.25 V
125 C
Tstg Storage temperature
- 40
Rth( _{c-h )} Thermal resistance(junction to heatsink) Double side cooled , clamping force 8.0 KN
Fm Mounting force
35
150 C
0.011 K/ W
47 KN
wt
Approximate weight
1600
g