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40PT06AI Datasheet, PDF (1/5 Pages) Nell Semiconductor Co., Ltd – Stansard SCRs, 40A
SEMICONDUCTOR
40PT Series RRooHHSS
Stansard SCRs, 40A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
40
600 to 1600
4 to 35
Unit
A
V
mA
DESCRIPTION
The 40PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where in-rush current conditions are critical such
as overvoltage crowbar protection circuits in power
supplies, in-rush current limiting circuits, solid
state relay in back to back configuration, welding
equipment and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
2
1
2
3
1
2
3
TO-220AB (non-Insulated) TO-220AB (lnsulated)
(40PTxxA)
(40PTxxAI)
A2
A1 A2 G
TO-3P (non-Insulated)
(40PTxxB)
A2
A1 A2 G
TO-3P (Insulated)
(40PTxxBI)
A1 A2
G
TO-263 (D2PAK)
(40PTxxH)
1
2
3
2
(A2)
TO-247AB (non-Insulated)
(40PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
IT(RMS)
IT(AV)
ITSM
I2t
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=95°C
Tc=90°C
Tc=80°C
Tc=95°C
Tc=90°C
Tc=80°C
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt F = 60 Hz
Tj = 125ºC
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
IGM
PGM
PG(AV)
VDRM
VRRM
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Storage temperature range
Tstg
Operating junction temperature range
Tj
Maximum peak reverse gate voltage VRGM
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Page 1 of 5
VALUE
40
25
460
480
1058
50
4
10
1
600 to 1600
- 40 to + 150
- 40 to + 125
5
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
V