30PT06AI Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – Stansard SCRs, 30A

SEMICONDUCTOR
30PT Series _RRooHHSS
Stansard SCRs, 30A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
30
600 to 1600
4 to 50
Unit
A
V
mA
DESCRIPTION
The 30PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power dissipation are critical such as solid
state relay, welding equipment and high power
control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A2
A1
A2
G
TO-220AB (non-Insulated)
(30PTxxA)
1
2
3
TO-220AB (lnsulated)
(30PTxxAI)
A2
A1 _{A2 G}
TO-3P (non-Insulated)
(30PTxxB)
A2
A1 _A2
G
TO-263 (D²PAK)
(30PTxxH)
A1 _{A2 G}
TO-3P (Insulated)
(30PTxxBI)
2
(A2)
TO-247AB
(30PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
I_T(RMS)
I_T(AV)
I_TSM
I²t
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
F =50 Hz
F =60 Hz
t_p = 10 ms
T_c=100°C
T_c=95°C
T_c=80°C
T_c=100°C
T_c=95°C
T_c=80°C
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
dI/dt F = 60 Hz
T_j = 125ºC
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
I_GM
P_GM
P_G(AV)
V_DRM
V_RRM
T_p = 20 µs
T_p =20µs
T_j =125ºC
T_j =125ºC
T_j = 125ºC
T_j = 125ºC
Storage temperature range
T_stg
Operating junction temperature range
T_j
Maximum peak reverse gate voltage V_RGM
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VALUE
30
19
400
420
800
50
4
10
1
600 to 1600
- 40 to + 150
- 40 to + 125
5
UNIT
A
A
A
A²s
A/µs
A
W
W
V
ºC
V