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2SK4107 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications
SEMICONDUCTOR
2SK4107 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(15A, 500Volts)
DESCRIPTION
The Nell 2SK4107 is a three-terminal silicon device with
current conduction capability of 15A, fast switching speed,
low on-state resistance, breakdown voltage rating of 500V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched
mode power supplies, DC to DC converters, motor control
circuits, UPS and general purpose switching applications.
D
G
D
S
TO-3PB
FEATURES
RDS(ON) = 0.33Ω @ VGS = 10V
Ultra low gate charge(48nC typical)
Low reverse transfer capacitance
(CRSS = 15pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
15
500
0.33 @ VGS = 10V
48
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS
Gate to Source voltage
ID
Continuous Drain Current (VGS = 10V)
TC=25°C
TC=100°C
IDM
Pulsed Drain current(Note 1)
IAR
Avalanche current(Note 1)
EAR
Repetitive avalanche energy(Note 1)
lAR=15A, RGS=50Ω, VGS=10V
EAS
Single pulse avalanche energy(Note 2)
lAS=15A, L=5.8mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
TO-3PB
TJ
Operation junction temperature
TSTG
Storage temperature
TL
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.lAS=15A, L=5.8mH, VDD = 90V, RG =25Ω, starting TJ =25°C.
3.ISD ≤ 15A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, starting TJ =25°C.
VALUE
UNIT
500
500
V
±30
15
9.3
A
60
15
15
mJ
765
mJ
3.5
V /ns
150
W
1.2
W /°C
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
www.nellsemi.com
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