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2SK3564 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
SEMICONDUCTOR
2SK3564 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(3A, 900Volts)
DESCRIPTION
The Nell 2SK3564 is a three-terminal silicon device with
current conduction capability of 3A, fast switching speed,
low on-state resistance, breakdown voltage rating of 900V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched
mode power supplies, DC to DC converters, motor control
circuits, UPS, switching regulator relay drive and general
purpose switching applications.
FEATURES
RDS(ON) = 3.70Ω @ VGS = 10V
Ultra low gate charge(17nC typical)
Low reverse transfer capacitance
(CRSS = 15pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
GDS
TO-220F
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
3
900
3.70 @ VGS = 10V
17
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS
Gate to Source voltage
ID
Continuous Drain Current (VGS = 10V)
TC=25°C
TC=100°C
IDM
Pulsed Drain current(Note 1)
IAR
Avalanche current(Note 1)
EAR
Repetitive avalanche energy(Note 1)
lAR=3A, RGS=50Ω, VGS=10V
EAS
Single pulse avalanche energy(Note 2)
lAS=3A, L=83mH
dv/dt
PD
Peak diode recovery dv/dt(Note 3)
Total power dissipation
TC=25°C
TO-220F
TJ
Operation junction temperature
TSTG
Storage temperature
TL
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2. lAS=3A, L=83mH, VDD = 90V, RG =25Ω, starting TJ =25°C.
3.ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, starting TJ =25°C.
VALUE
900
900
±30
3
1.9
9
3
4.0
408
3.5
UNIT
V
A
mJ
mJ
V /ns
40
W
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
www.nellsemi.com
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