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| 2SC4793AF Datasheet, PDF (1/3 Pages) Nell Semiconductor Co., Ltd – High Frequency NPN Power Transistor | |||
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SEMICONDUCTOR
2SC4793AF RRooHHSS
Nell High Power Products
High Frequency NPN Power Transistor
1A/230V/20W
FEATURES
High transition frequency:
fT = 100MHz (typ.)
Complementary to 2SA1837AF
TO-220F package which can be
installed to the heat sink with one screw
APPLICATIONS
Power amplifier
Driver stage amplifier
BCE
TO-220F
(2SC4793AF)
C (2)
B
(1)
NPN
E(3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VCBO
Collector to base voltage
VCEO
Collector to emitter voltage
IB=0
VEBO
Emitter to base voltage
IC=0
IC
Collector current-continuous
ICM (Icp)
Peak collector current
tp<5 ms
IB
Base Current
PC
Collector power dissipation
TC=25°C
Ta=25°C
TJ
Junction temperature
TSTG
Storage temperature
VALUE
230
230
5
1
2
0.1
20
2.0
150
-55 to 150
UNIT
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
ICBO
Collector cutoff current
VCBO=230V, lE=0
TC=25°C
TC=125°C
lEBO
Emitter cutoff current
VEBO=5V, lC=0
V(BR)CEO Collector to emitter breakdown voltage IB=0, Ic=100mA
VCE(sat)* Collector to emitter saturation voltage IC=0.5A, IB=50mA
VBE
hFE*
FT
Base to emitter voltage
Forward current transfer ratio
(DC current gain)
Transition frequeucy
IC=0.5A, VCE=5V
IC=0.1A, VCE=5V
VCE=10V, IC=100mA
Cob
Collector output capacitance
VCB=10V, IE=0, f=1MHz
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
Min.
230
100
Typ.
100
20
Max.
1.0
100
1.0
1.5
1.0
320
UNIT
μA
V
MHz
pF
www.nellsemi.com
Page 1 of 3
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