2SC3679B Datasheet, PDF (1/3 Pages) Nell Semiconductor Co., Ltd – Silicon NPN triple diffusion planar transistor

SEMICONDUCTOR
2SC3679B RRooHHSS
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
5A/800V/100W
2SC31627390J
15.6±0.4
9.6
4.8±0.2
2.0±0.1
TO-3P(B)
FEATURES
High-speed switching
High collector to base voltage V_CBO
Satisfactory linearity of foward current transfer ratio h_FE
TO-3P package which can be installed to the heat sink
with one screw
APPLICATIONS
Switching regulator and general purpose
Φ3.2±0,1
2
3
1.05
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
0.65
+0.2
-0.1
1.4
12 3
B
All dimensions in millimeters
C
E ^NPN
ABSOLUTE MAXIMUM RATINGS (T_a = 25°C)
SYMBOL
PARAMETER
V_CBO
Collector to base voltage
V_CEO
Collector to emitter voltage
V_EBO
Emitter to base voltage
I_CP
Peak collector current
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
THERMAL RESISTANCE (T_a=25°C)
SYMBOL
PARAMETER
R_th(j-c)
Thermal resistance, junction to ambient
T_C= 25°C
T_a= 25°C
VALUE
900
800
7
10
5
2.5
100
3.5
150
-55 to 150
UNIT
V
A
W
ºC
Min
Typ
Max
UNIT
2.0
°C/W
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