2SA1943BL Datasheet, PDF (1/3 Pages) Nell Semiconductor Co., Ltd – Silicon PNP triple diffusion planar transistor

SEMICONDUCTOR
2SA1943BL Series RRooHHSS
Nell High Power Products
Silicon PNP triple diffusion planar transistor
-15A/-230V/150W
20.00±0.20
18.00
ø3.30±0.20
5.00
3.00
TO-3PL
FEATURES
High breakdown voltage, V_CEO = -230V (min)
Complementary to 2SC5200BL
TO-3PL package which can be installed to the
heat sink with one screw
APPLICATIONS
Suitable for use in 100W high fidelity audio
amplifier’s output stage
2.50
(typ.)
3.00
5.45±0.05
1
1.00
(typ.)
5.45±0.05
23
0.60
3.20
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
All dimensions in millimeters
C
E ^PNP
ABSOLUTE MAXIMUM RATINGS (T_a = 25°C)
SYMBOL
PARAMETER
V_CBO
Collector to base voltage
V_CEO
Collector to emitter voltage
V_EBO
Emitter to base voltage
I_CP
Peak collector current t_p ≤ 5 ms
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS (T_C = 25°C)
SYMBOL
PARAMETER
R_th(j-c)
Maximum thermal resistance, junction to case
www.nellsemi.com
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VALUE
-230
-230
-5
-30
-15
-1.5
T_C= 25°C
150
150
-55 to 150
UNIT
V
A
W
ºC
VALUE
1.10
UNIT
ºC/W