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| 2SA1837AF Datasheet, PDF (1/3 Pages) Nell Semiconductor Co., Ltd – High Frequency PNP Power Transistor | |||
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SEMICONDUCTOR
2SA1837AF RRooHHSS
Nell High Power Products
High Frequency PNP Power Transistor
-1A/-230V/20W
FEATURES
High transition frequency:
fT = 70MHz (typ.)
Complementary to 2SC4793AF
TO-220F package which can be
installed to the heat sink with one screw
APPLICATIONS
Power amplifier
Driver stage amplifier
BCE
TO-220F
(2SA1837AF)
C (2)
B
(1)
PNP
E(3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VCBO
Collector to base voltage
VCEO
Collector to emitter voltage
IB=0
VEBO
Emitter to base voltage
IC=0
IC
Collector current-continuous
ICM (Icp)
Peak collector current
tp<5 ms
IB
Base Current
PC
Collector power dissipation
TC=25°C
Ta=25°C
TJ
Junction temperature
TSTG
Storage temperature
VALUE
-230
-230
-5
-1
-2
-0.1
20
2.0
150
-55 to 150
UNIT
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
ICBO
Collector cutoff current
VCBO=-230V, lE=0
TC=25°C
TC=125°C
lEBO
Emitter cutoff current
VEBO= -5V, lC=0
V(BR)CEO Collector to emitter breakdown voltage IB=0, Ic= -100mA
-230
VCE(sat)* Collector to emitter saturation voltage IC= -0.5A, IB= -50mA
VBE
Base to emitter voltage
IC= -0.5A, VCE= -5V
Forward current transfer ratio
hFE*
(DC current gain)
IC= -0.1A, VCE= -5V
100
fT
Transition frequeucy
VCE= -10V, IC= -100mA
Cob
Collector output capacitance
VCB= -10V, IE=0, f=1MHz
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
Typ.
Max.
-1.0
-100
-1.0
-1.5
-1.0
320
70
30
UNIT
μA
V
MHz
pF
www.nellsemi.com
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