2SA1386B Datasheet, PDF (1/3 Pages) Nell Semiconductor Co., Ltd – Silicon PNP Epitaxial Planar Transistor

SEMICONDUCTOR
2SA1386B Series RRooHHSS
Nell High Power Products
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3519B)
-15A/-160V,-180V/130W
15.6±0.4
9.6
4.8±0.2
2.0±0.1
TO-3P(B)
FEATURES
Recommend for 105W high Fiderity audio frequency
amplifier output stage
Complement to type 2SC3519B & 2SC3519B-A
APPLICATIONS
Audio and general purpose
Φ3.2±0,1
2
3
+0.2
1.05 _-0.1
5.45±0.1
5.45±0.1
BCE
0.65
+0.2
-0.1
1.4
12 3
B
All dimensions in millimeters
C
E ^PNP
ABSOLUTE MAXIMUM RATINGS (T_a = 25°C)
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_CP (I_CM)
I_C
I_B
P_C
T_j
T_stg
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation
Derate above 25°C
Junction temperature
Storage temperature
T_C= 25°C
VALUE
2SA1386B 2SA1386B-A
-160
-180
-160
-180
-5
-30
-15
-4
130
1.04
150
-55 to 150
UNIT
V
A
W
W/°C
ºC
THERMAL CHARACTERISTICS (T_a=25°C unless otherwise specified)
SYMBOL
PARAMETER
R_th(j-a)
Maximum thermal resistance, junction to ambient
VALUE
1.65
UNIT
°C/W
www.nellsemi.com
Page 1 of 3