2N3055 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,50V,115W)

SEMICONDUCTOR
2N3055(NPN)
MJ2955(PNP) ^RRooHHSS
Nell High Power Products
Complementary Silicon power transistors
(15A / 60V / 115W)
TAB
26.00 Max.
10.90
13.10 Max. 8.60
1.60
1
2
TO-3
FEATURES
Designed for general designed for general-purpose
switching and amplifier applications.
DC current gain-h_FE = 20-70 @ l_C = 4 Adc
Collector-Emitter saturation voltage-
V_CE(sat) = 1.1 Vdc (Max) @ lC = 4 Adc
Excellent safe operating area
DESCRIPTION
The 2N3055 is a silicon epitaxial-base planar NPN
transistor mounted in JEDEC TO-3 metal case.
lt is intended for power switching circuits, series
and shunt regulators, output stages and fidelity
amplifiers.
The complementary PNP type is MJ2955.
1
2
2-Φ4.0 Thru.
All dimensions in millimeters
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1)
B
(2)
E
2N3055(NPN)
C (TAB)
(1)
B
(2)
E
MJ2955(PNP)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
V_CBO
Collector to base voltage (I_E = 0)
V_CER
Collector to emitter voltage (R_BE = 100Ω)
V_CEO
Collector to emitter voltage (I_B = 0)
V_EBO
Emitter to base voltage
I_C
Collector current
I_B
Base current
Total power dissipation
P_D
Derate above 25ºC
T_C= 25°C
T_j
Junction temperature
T_stg
Storage temperature
*For PNP types voltage and current values are negative.
THERMAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
R_th(j-c)
Thermal resistance, junction to case
VALUE
100
70
60
7
15
7
115
0.657
200
-65 to 200
VALUE
1.50
UNIT
V
A
W
W/ºC
ºC
UNIT
ºC/W
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