25PT Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – Stansard SCRs, 25A

SEMICONDUCTOR
25PT Series _RRooHHSS
Stansard SCRs, 25A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
25
600 to 1200
4 to 40
Unit
A
V
mA
A
KA
G
KA
G
TO-220AB (Non-lnsulated) TO-220AB (lnsulated)
(25PTxxA)
(25PTxxAI)
DESCRIPTION
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
TO-263 (D²PAK)
(25PTxxH)
TO-220F (ITO-220AB)
(25PTxxAF)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
I_T(RMS)
I_T(AV)
TO-263/TO-220AB
TO-220AB insulated/TO-220F
TO-263/TO-220AB
TO-220AB insulated/TO-220F
Tc=100°C
Tc=83°C
Tc=100°C
Tc=83°C
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
F =50 Hz
I_TSM
F =60 Hz
I²t
t_p = 10 ms
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
dI/dt
I_GM
P_GM
P_G(AV)
V_DRM
V_RRM
T_stg
F = 60 Hz
T_p = 20 µs
T_p =20µs
T_j =125ºC
T_j =125ºC
T_j = 125ºC
T_j = 125ºC
T_j = 125ºC
Operating junction temperature range
T_j
VALUE
25
16
300
314
450
50
4
10
1
600 to 1200
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A²s
A/µs
A
W
W
V
ºC
www.nellsemi.com
Page 1 of 6