20PT Datasheet, PDF (1/5 Pages) Nell Semiconductor Co., Ltd – Stansard SCRs, 20A

SEMICONDUCTOR
20PT Series _RRooHHSS
Stansard SCRs, 20A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
20
600 to 1000
3 to 25
Unit
A
V
mA
A
KA
G
K _AG
TO-220AB (Non-lnsulated) TO-220AB (lnsulated)
(20PTxxA)
(20PTxxAI)
DESCRIPTION
The 20PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
TO-263 (D²PAK)
(20PTxxH)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
I_T(RMS)
Average on-state current
(180° conduction angle)
I_T(AV)
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
I_TSM
I²t
dI/dt
I_GM
P_GM
P_G(AV)
V_DRM
V_RRM
T_stg
T_j
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated
TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
t_p = 10 ms
T_C=100°C
T_C=80°C
T_C=100°C
T_C=80°C
t = 20 ms
t = 16.7 ms
F = 60 Hz
T_j = 125ºC
T_p = 20 µs
T_p =20µs
T_j =125ºC
T_j = 125ºC
T_j = 125ºC
T_j =125ºC
VALUE
20
13
200
220
200
50
4
10
1
600 to 1000
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A²s
A/µs
A
W
W
V
ºC
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