1PT_14 Datasheet, PDF (1/4 Pages) Nell Semiconductor Co., Ltd – Sensitive gate SCRs, 1A

SEMICONDUCTOR
1PT Series _RRooHHSS
Sensitive gate SCRs, 1A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
1
600 to 800
10 to 200
Unit
A
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the 1PT
series is suitable for all applications where the available
gate current is limited, such as capacitive discharge
ignitions, motor control in kitchen aids, overvoltage
crowbar protection in low power supplies among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
TO-92
(1PTxxE)
A
G
K
3(A)
2(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Forward peak gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
SYMBOL
I_T(RMS)
TEST CONDITIONS
T_c =85ºC
VALUE
1
UNIT
A
I_T(AV)
I_TSM
I²t
dI/dt
I_GM
P_GM
P_G(AV)
V_DRM
V_RRM
T_stg
T_j
T_c =85ºC
F =50 Hz
F =60 Hz
t = 20 ms
t = 16.7 ms
t_p = 10 ms
F = 60 Hz
T_j = 110ºC
T_p = 20 µs
T_j = 110ºC
T_A=25°C, Pulse width≤0.1µs
T_j =110ºC
T_j =25ºC
0.6
12
13
0.72
50
0.5
0.5
0.1
600 and 800
A
A
A²s
A/µs
A
W
W
V
- 40 to + 150
ºC
- 40 to + 110
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