16PT06AI Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – Stansard SCRs, 16A

SEMICONDUCTOR
16PT Series _RRooHHSS
Stansard SCRs, 16A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
16
600 to 1000
25
Unit
A
V
mA
DESCRIPTION
The 16PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
2
1
2
3
TO-251 (I-PAK)
(16PTxxF)
2
2
2
1
3
TO-252 (D-PAK)
(16PTxxG)
1
2
3
1
2
3
TO-220AB (Non-lnsulated) TO-220AB (lnsulated)
(16PTxxA)
(16PTxxAI)
A2
A1 _A2
G
TO-263 (D²PAK)
(16PTxxH)
2
(A2)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
I_T(RMS)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
I_T(AV)
I_TSM
I²t
dI/dt
I_GM
P_GM
P_G(AV)
V_DRM
V_RRM
T_stg
T_j
TEST CONDITIONS
TO-251/TO-252
TO-220AB/TO-263
T_c=110°C
TO-220AB insulated
TO-251/TO-252
TO-220AB/TO-263
T_c=86°C
T_c=110°C
TO-220AB insulated
F =50 Hz
F =60 Hz
t_p = 10 ms
T_c=86°C
t = 20 ms
t = 16.7 ms
F = 60 Hz
T_j = 125ºC
T_p = 20 µs
T_p =20µs
T_j =125ºC
T_j = 125ºC
T_j = 125ºC
T_j =125ºC
VALUE
16
10
190
200
180
50
4
10
1
600 to 1000
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A²s
A/µs
A
W
W
V
ºC
www.nellsemi.com
Page 1 of 6