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13N60 Datasheet, PDF (1/8 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.26Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
D
S
TO-220AB
(13N60A)
GDS
TO-220F
(13N60AF)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
13
600
0.26 @ VGS = 10V
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS
Gate to Source voltage
ID
Continuous Drain Current
TC=25°C
TC=100°C
IDM
Pulsed Drain current(Note 1)
IAR
Avalanche current(Note 1)
EAR
Repetitive avalanche energy(Note 1)
lAR=4.3A,RGS=50Ω, VGS=10V
EAS
dv/dt
PD
Single pulse avalanche energy (Note 2)
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt (Note 3)
Total power dissipation (Derate above 25°C)
lAS=4.3A
TO-220AB
TC=25°C TO-220F
TJ
Operation junction temperature
TSTG
Storage temperature
TL
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
600
600
±30
13
8.2
39
4.3
1.2
235
100
20
116(0.93)
34(0.27)
-55 to 150
-55 to 150
300
10 (1.1)
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=4.3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.
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UNIT
V
A
mJ
V /ns
W(W/°C)
ºC
lbf.in (N.m)