12PT06AI-S Datasheet, PDF (1/7 Pages) Nell Semiconductor Co., Ltd – Sensitive and Standard SCRs, 12A

SEMICONDUCTOR
12PT Series _RRooHHSS
Sensitive and Standard SCRs, 12A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
12
600 to 1000
0.2 to 15
Unit
A
V
mA
DESCRIPTION
Available either in sensitive or standard gate
triggering levels, the 12A SCR series is suitable
to fit all modes of control found in applications
such as overvoltage crowbar protection, motor
control circuits in power tools and kitchen aids,
inrush current limiting circuits, capacitive
discharge ignition and voltage regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
2
1
23
TO-251 (I-PAK)
(12PTxxF)
2
2
12
3
TO-252 (D-PAK)
(12PTxxG)
12 ₃
12 ₃
TO-220AB (Non-lnsulated)
(12PTxxA)
TO-220AB (lnsulated)
(12PTxxAI)
A2
A1 _A2
G
TO-263 (D²PAK)
(12PTxxH)
2
(A2)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
I_T(RMS)
I_T(AV)
TO-251/TO-252/TO-220AB/TO-263
TO-220AB insulated
TO-251/TO-252/TO-220AB/TO-263
TO-220AB insulated
Tc=105°C
Tc=90°C
Tc=105°C
Tc=90°C
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
I_TSM
F =50 Hz
F =60 Hz
I²t
t_p = 10 ms
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
dI/dt F = 60 Hz
I_GM
P_G(AV)
T_stg
T_p = 20 µs
T_j =125ºC
T_j = 125ºC
T_j = 125ºC
Operating junction temperature range
T_j
VALUE
12
8
140
145
98
50
4
1
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A²s
A/µs
A
W
ºC
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