OE-X8HXXXXX Datasheet, PDF (2/3 Pages) Nel Frequency Controls,inc – Precision SC-cut OCXO in 36x27 mm “Europack”

CRYSTAL OSCILLATORS
Data Sheet 0635J
OE-X8HXXXXX Series
Parameter
Symb
Condition
Min Typ Max
Unit
Note
Absolute Maximum Ratings
Input Break
Vcc
-0.5
13.0
V
Down Voltage
Storage temper.
Ts
-40
85
°C
Control Voltage
Vc
-1
9
V
Electrical
Frequency
F
4.8 10.000 160
MHz
1*
Frequency stability ∆F/F
vs. Temp.
vs. Supply
±10
1
2
ppb
ppb/V
See chart below
Aging
per day
per year
5E-10
1E-7
after 30 days
5E-8 available2*
Allan Variance
.1s to 10s
1E-11
SSB Phase Noise
1Hz
-90
dBc/Hz
3*
10 Hz
-120
100 Hz
-150
1 KHz
-153
10 KHz
-160
Retrace
After 30 minutes
±10
ppb
G-sensitivity
worst direction
±1.0
ppb/G
Input Voltage
Vcc
4.75 5.0 5.25
3.15 3.3 3.45
11.4 12.0 12.6
V
See chart below to specify
Power consumption P steady state, 25°C
steady state, -30°C
start-up @ -30°C
0.8
1.2
W
Standard Operating
1.5
Temperature, for Op
2.5
3.2
Temp. 85 °C ad 20%
Spectral Purity
Subharmonics
Spurious
-50
-45
-80
dBc
At Higher Frequencies
Harmonics/Sine
-35
-30
Load
10KOhm//15pF (HCMOS/TTL), 50 Ohm (Sinewave)
Warm-up time
τ to 0.1ppm accuracy
3
5
minutes
3 min. at 12V
Output Waveform
3.3V HCMOS/TTL compatible or Sinewave (+7± 3) dBm
-25dBm Harmonics at sine
Control voltage
Vc
0
4.0
V
Pull range
from nominal F ±0.5 ±1
ppm
Deviation slope
Monotonic, posit
0.4
ppm/V
Setability
Vc0 @25°C, Fnom.
1.0 2.0
3.0
V
Environmental and Mechanical
Operating temp. range
-30°C to 70°C Standard, Other options – see chart below
Mechanical Shock
Per MIL-STD-202, 30G, 11ms
Vibration
Per MIL-STD-202, 5G to 2000 Hz
Soldering Conditions
260°C for 10s Max leads only
Electrical Connections
Pin Out
Pin #1-Vc ; Pin#2 – Vref; Pin #3 – Vcc; Pin #4- Output ; Pin #5- GND;
Notes: 1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic multiplication. Both
methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important – high frequency crystal will be used. If
phase noise close to the carrier and aging are more important – multiplication will be used. Please consult factory for your specific requirement.
2* Aging rate is usually proportional to the operating frequency, unless higher frequency is achieved by multiplication. Keep it in mind
while specifying aging.
3* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency the phase noise
roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency offset range. If higher frequency is
achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to the lower Q of the crystal and is usually worse,
compared to multiplied solution. On the noise floor, however it remains more or less the same. This design usually starts utilizing multiplication
techniques in the range of 25 MHz to 35 MHz.
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