OD-X8JXXXXX Datasheet, PDF (2/3 Pages) Nel Frequency Controls,inc – Precision, Low Power Consumption, Fast Warm-up SC-cut OCXO in 20x20 mm Through Hole Package

CRYSTAL OSCILLATORS
Data Sheet 0635H
OD-X8JXXXXX Series
Parameter
Symb
Condition
Min Typ Max
Unit
Note
Absolute Maximum Ratings
Input Break
Vcc
Down Voltage
Storage temper.
Ts
-0.5
5.5
V
-40
85
°C
Control Voltage
Vc
-1
7
V
Electrical
Frequency
F
Frequency stability ∆F/F
Aging
Allan Variance
vs. Temp.
vs. Supply
per day
per year
.1s to 10s
8 10.000 160
±50
1
2
5E-10
1E-7
1E-11
MHz
ppb
ppb/V
1*
See chart below
after 30 days
5E-8 available2*
SSB Phase Noise
Retrace
1Hz
-90
dBc/Hz
3*
10 Hz
-120
100 Hz
-150
1 KHz
-153
10 KHz
-160
After 30 minutes
±10
ppb
G-sensitivity
worst direction
±1.0
ppb/G
Input Voltage
Power consumption
Spectral Purity
Load
Warm-up time
Output Waveform
Control voltage
Pull range
Deviation slope
Setability
Vcc
4.75 5.0 5.25
V
3.15 3.3 3.45
P steady state, 25°C
0.125 0.15
W
steady state, -30°C
0.35
start-up @ -30°C
0.5
0.7
Subharmonics
-50
-45
dBc
Spurious
-80
Harmonics/Sine
-35
-30
10KOhm//15pF (HCMOS/TTL), 50 Ohm (Sinewave)
τ to 0.1ppm accuracy
30
45
s
3.3V HCMOS/TTL compatible or Sinewave (+7± 3) dBm
Vc
0
Vref
V
from nominal F ±0.5 ±1
ppm
Monotonic, posit
0.4
ppm/V
Vc0 @25°C, Fnom. Vref/2-1 Vref/2 Vref/2+1
V
See chart below to specify
Standard Operating
Temperature, for Op
Temp. 85 °C ad 20%
At Higher Frequencies
Environmental and Mechanical
Operating temp. range
Mechanical Shock
Vibration
Soldering Conditions
-30°C to 70°C Standard, Other options – see chart below
Per MIL-STD-202, 30G, 11ms
Per MIL-STD-202, 5G to 2000 Hz
260°C for 10s Max leads only
Electrical Connections
Pin Out
Pin #1-Vc ; Pin#2 – Vref; Pin #3 – Vcc; Pin #4- Output ; Pin #5- GND;
Notes:
1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic
multiplication. Both methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important
– high frequency crystal will be used. If phase noise close to the carrier and aging are more important – multiplication will be
used. Please consult factory for your specific requirement.
2* Aging rate is usually proportional to the operating frequency, unless higher frequency is achieved by multiplication.
Keep it in mind while specifying aging.
3* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency
the phase noise roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency
offset range. If higher frequency is achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to
the lower Q of the crystal and is usually worse, compared to multiplied solution. On the noise floor, however it remains more or
less the same. This design usually starts utilizing multiplication techniques in the range of 25 MHz to 35 MHz.
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone [phone] FAX [phone]
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