UPA2450C Datasheet, PDF (7/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

μ PA2450C
5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion
applied to the device should become below 2000 με.^Note1 If the rate of distortion exceeds 2000 με, the characteristic
of a device may be degraded and it may result in failure.
Figure 2. Direction of substrate and stress
The substrate that mounted the device is on a stand with a support width of 24 mm.
The device is turned downward. The stress is applied from a top.
Stress
Substrate: 33 x 6 mm, t = 0.5 mm, FR-4
The direction of a device:
Bend
Support width 24 mm
Measurement position
Device
Figure 3. Example of the bend and the rate of distortion ^Note2
6000
5000
4000
3000
2000
1000
0
0
0.2 0.4 0.6 0.8
Bend - mm
Recommended condition
1
Note 1. Definition of rate of distortion(written as ε in this document)
ε = (l − l0)/l0
l0: Distance for two arbitrary points before receiving stress.
l: Distance above-mentioned when receiving stress.
2. The relation of the distortion and the bend changes with several conditions, such as a size of substrate and
so on.
Data Sheet G18792EJ1V0DS
7