UPA1980 Datasheet, PDF (7/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µ PA1980
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
VGS = 0 V
Pulsed
1
0.1
0.01
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD CURRENT vs. FORWARD VOLTAGE
10
TA = 125°C
75°C
1
25°C
–25°C
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8
1
1.2
VF - Forward Voltage - V
REVERSE CURRENT vs. REVERSE VOLTAGE
10000
P u ls e d
1000
TA = 125°C
100
75°C
10
25°C
1
0.1
0.01
–25°C
0.001
0
10
20
30
40
50
VR - Reverse Voltage - V
TERMINAL CAPACITANCE vs. REVERSE VOLTAGE
140
f = 1.0 MHz
120
100
80
60
40
20
0
0
10
20
30
40
50
VR - Reverse Voltage - V
Data Sheet G16550EJ1V0DS
7