UPA1857 Datasheet, PDF (6/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µPA1857
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
10
IAS = 3.8 A
EAS = 33 mJ
VDD = 30 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25˚C
1
10 µ
100 µ
1m
10m
L - Inductive Load - H
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 30 V
RG = 25 Ω
100
VGS = 20 → 0 V
IAS ≤ 3.8 A
80
60
40
20
0
25
50
75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
5
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 125˚C/W (1unit)
Rth(ch-A) = 73.5˚C/W (2unit)
10
1
0.01
0.0001
0.001
0.01
0.1
1
PW - Pulse Width - s
Single Pulse
Mounted on Ceramic
Board of 50 cm² x1.1 mm
2unit:
PD (FET1) : PD (FET2) = 1 : 1
10
100
1000
6
Data Sheet G15060EJ2V0DS