NX8346TB Datasheet, PDF (6/9 Pages) NEC – 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8346TB,NX8346TY
ELECTRO-OPTICAL CHARACTERISTICS (TC = −20 to +95°C, BOL, unless otherwise specified)
Parameter
Mean Optical Output Power
Peak Emission Wavelength
Side Mode Suppression Ratio
Threshold Current
Differential Efficiency
Temperature Dependence of
Differential Efficiency
Operation Voltage
Monitor Current
Monitor Dark Current
Rise Time
Fall Time
Monitor PD Terminal Capacitance
Relative Intensity Noise
Tracking Error^*2
Symbol
Conditions
Pf
λp
CW, Pf = −2 dBm
SMSR CW, Pf = −2 dBm
Ith
CW, TC = 25°C
CW
ηd CW, Pf = −2 dBm, TC = 25°C
CW, Pf = −2 dBm
Δηd _{Δηd = 10 log}
ηd
ηd (@ 25°C)
Vop CW, Pf = −2 dBm
Im
CW, Pf = −2 dBm
ID
VR = 3.3 V, TC = 25°C
VR = 3.3 V
tr
20-80%
tf
20-80%
Ct VR = 3.3 V, f = 1 MHz
RIN
γ
MIN.
1 290
35
2
0.020
0.005
−3.5
TYP.
−2
8
0.025
MAX.
1 330
15
30
0.040
0.060
1.5
Unit
dBm
nm
dB
mA
W/A
dB
0.5
100
*1
*1
*1
−1.0
2.2
V
1 000
μA
10
nA
500
50
ps
50
ps
6
20
pF
−128 dB/Hz
1.0
dB
*1 9.95/10.3/10.5 Gb/s, PRBS 2³¹âˆ’1, NRZ, Duty Cycle = 50%
*2 Tracking Error: γ
Pf
(mW)
TC = 25°C
Pf
γ = 10 log
[dB]
Pf @ 25°C
Pf @ 25°C
Pf
TC = –20 to +95°C
0
Im
Im _(mA)
6
Data Sheet PL10722EJ01V0DS