MC-4R256CEE6B Datasheet, PDF (6/16 Pages) NEC – Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT

MC-4R256CEE6B, 4R256CEE6C
Signal
RSCK
SA0
SA1
SA2
SCL
SDA
SIN
SOUT
SVDD
SWP
VCMOS
VDD
VREF
I/O
Type
Description
(2/2)
I
VCMOS Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
I
SVDD
Serial Presence Detect Address 0.
I
SVDD
Serial Presence Detect Address 1.
I
SVDD
Serial Presence Detect Address 2.
I
SVDD
Serial Presence Detect Clock.
I/O
SVDD Serial Presence Detect Data (Open Collector I/O).
I/O
VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
I/O
VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
—
—
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
I
SVDD Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
—
—
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
—
—
Supply voltage for the RDRAM core and interface logic.
—
—
Logic threshold reference voltage for RSL signals.
6
Preliminary Data Sheet M14541EJ1V1DS00