UPA1701A Datasheet, PDF (5/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS = 2.5 V
30
4V
10 V
20
10
0
ID = 3.5 A
− 20 0 20 40 60 80 100 120
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
0.1
1
10 30 100
VDS - Drain to Source Voltage - V
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100A/^µs
VGS = 0 V
100
10
1
0.1
1
10
100
ID - Drain Current - A
µ PA1701A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
0V
10
VGS =10 V
1
0.1
0
0.5
1.0
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
tr
tf
td(off)
td(on)
VDS = 15 V
VGS = 4 V
1
RG = 10 Ω
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 7 A
30
VDD = 24 V
VGS
6
15 V
6V
5
20
4
3
10
2
VDS
1
0
0
2 4 6 8 10 12 14 16
QG - Gate Charge - nC
5