NP88N055ELE Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 _Pulsed
10
TA = −25°C
25°C
1
75°C
150°C
175°C
0.1
0.01
1
VDS = 10 V
2
3
4
5
6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
1
TA = 175°C
75°C
25°C
−50°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
Pulsed
10
5
0
1
VGS = 4.5 V
5.0 V
10 V
10
100
ID - Drain Current - A
1000
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
VGS = 10 V
300
5.0 V
200
4.5 V
100
0
0
Pulsed
1.0
2.0
3.0
4.0
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
5
ID = 44 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100 150
Tch - Channel Temperature - °C
Data Sheet D13933EJ7V0DS
5