NP84N055ELE Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
100
10
TA = −40°C
25°C
75°C
150°C
175°C
1
0.1
1.0 2.0
3.0
4.0
5.0 6.0
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
TA = 175°C
75°C
1
25°C
−40°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
Pulsed
VGS = 4.5 V
10
5V
10 V
5
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
Pulsed
VGS = 10 V
320
240
5.0 V
160
4.5 V
80
00
1
2
3
4
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
10
ID = 42 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50 100 150
Tch - Channel Temperature - °C
Data Sheet D14100EJ7V0DS
5