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NP83P04PDG Datasheet, PDF (5/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR | |||
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = â4.5 V
6
â10 V
4
2
0
-75
ID = â41.5 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
td(on)
tr
10
VDD = â20 V
VGS = â10 V
RG = 0 Ω
1
-0.1
-1
-10
ID - Drain Current - A
-100
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
-10
VGS = â10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP83P04PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40
-12
VDD = â32 V
-30
â20 V
-9
â8 V
-20
-10
0
0
-6
VGS
-3
VDS
40
80
ID = â83 A
0
120 160 200
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = â100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18690EJ3V0DS
5
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