NP50P04KDG Datasheet, PDF (5/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15
VGS = −4.5 V
10
−10 V
5
0
-75
ID = −25 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
td(of f )
tf
100
td(on)
10
tr
VDD = −20 V
VGS = −10 V
RG = 0 Ω
1
-0.1
-1
-10
ID - Drain Current - A
-100
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
-10
VGS = −10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP50P04KDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40
-12
-30
-20
-10
0
0
VDD = −32 V
−20 V
-9
−8V
-6
VGS
-3
VDS
ID = −50 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18688EJ3V0DS
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