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NP36P06KDG Datasheet, PDF (5/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR | |||
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
VGS = â4.5 V
40
30
â10 V
20
10
0
-75
ID = â18 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
10
VDD = â30 V
VGS = â10 V
RG = 0 Ω
1
td(on)
-0.1
-1
-10
ID - Drain Current - A
-100
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-10
VGS = â10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP36P06KDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60
-12
-50
VDD = â48 V
-10
â30 V
-40
â12 V
-8
-30
-6
VGS
-20
-4
-10
0
0
VDS
-2
ID = â36 A
0
10 20 30 40 50 60
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = â100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18687EJ3V0DS
5
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