MC-458CB646 Datasheet, PDF (5/16 Pages) NEC – 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-458CB646
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Voltage on power supply pin relative to GND VCC
Voltage on input pin relative to GND
VT
Short circuit output current
IO
5 ^{Power dissipation}
PD
Operating ambient temperature
TA
Storage temperature
Tstg
Condition
Rating
Unit
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
4
W
0 to 70
°C
–55 to +125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Supply voltage
VCC
High level input voltage
VIH
Low level input voltage
VIL
Operating ambient temperature
TA
Condition
MIN.
3.0
2.0
−0.3
0
TYP.
MAX.
Unit
3.3
3.6
V
VCC + 0.3
V
+0.8
V
70
°C
5 ^{Capacitance (TA = 25 °C, f = 1 MHz)}
Parameter
Symbol
Test condition
MIN. TYP. MAX. Unit
Input capacitance
CI1 A0 - A11, BA0(A13), BA1(A12), /RAS, /CAS, /WE 22
40
pF
CI2 CLK0, CLK2
24
40
CI3 CKE0
22
40
CI4 /CS0, /CS2
12
20
CI5 DQMB0 - DQMB7
7
13
Data input/output capacitance
CI/O DQ0 - DQ63
7
13
pF
Data Sheet M13049EJ7V0DS00
5