2SJ624 Datasheet, PDF (5/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
VGS = −4.5 V
Pulsed
80
TA = 125°C
60
75°C
25°C
40
−25°C
20
0
-0.01
-0.1
-1
-10
ID - Drain Current - A
-100
2SJ624
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
VGS = −2.5 V
Pulsed
100
TA = 125°C
75°C
80
25°C
60
−25°C
40
20
-0.01
-0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
VGS = −1.8 V
Pulsed
100
TA = 125°C
75°C
25°C
80
60
−25°C
40
-0.01
-0.1
-1
-10
ID - Drain Current - A
-100
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
tf
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
tr
td(on)
1
-0.1
-1
-10
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
1000
Ciss
100
Coss
Crss
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10
1
VGS = 0 V
0.1
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
0.01
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet D15890EJ1V0DS
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