2SJ603 Datasheet, PDF (5/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ603
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
80
–4.5V
VGS = –4.0 V
60
–10 V
40
20
0
−50
0
ID = –13 A
50
100 150
Tch - Channel Temperature - ˚C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100 _Pulsed
VGS = –10 V
–10
–4.0 V
–1
0V
–0.1
–0.01
0
–0.5
–1.0
VSD - Source to Drain Voltage - V
–1.5
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
–0.1
–1
–10
VDS - Drain to Source Voltage - V
–100
1000
SWITCHING CHARACTERISTICS
VDD = –30 V
VGS = –10 V
RG = 0 Ω
100
td(off)
tf
10
td(on)
tr
1
–0.1
–1
–10
–100
ID - Drain Current - A
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60
–12
ID = –25 A
–50
VDD = –48 V
–30 V
–40
–12 V
–10
VGS ^–8
–30
–6
–20
–4
–10
0
0
–2
VDS
0
5 10 15 20 25 30 35 40
QG - Gate Charge - nC
Data Sheet D14648EJ3V0DS
5