2SA1977 Datasheet, PDF (5/12 Pages) NEC – PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

INSERTION GAIN vs. FREQUENCY
15
VCE = –8 V
f = 1 GHz
10
5
0
–1
–10
–100
IC - Collector Current - mA
2SA1977
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = –8 V
8
6
4
2
0
–1
–10
–100
IC - Collector Current - mA
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.5
f = 1 MHz
1
0.5
0
–1
–10
–100
VCB - Collector to Base Voltage - V
35
30
25
20
15
10
5
0
–5
–10
–15
0.1
INSERTION GAIN vs. FREQUENCY
VCE = –8 V
IC = –20 mA
0.2 0.3 0.4 0.5
1.0
f - Frequency - GHz
2.0 3.0
5