UPA821TC Datasheet, PDF (4/12 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7.00
6.00
VCE = 3 V
f = 1 GHz
5.00
4.00
3.00
2.00
1.00
0.00
1
10
100
Collector Current IC (mA)
NOISE FIGURE vs. COLLECTOR CURRENT
6.00
VCE = 3 V
5.00 ^{f = 1 GHz}
4.00
3.00
2.00
1.00
0.00
1
10
100
Collector Current IC (mA)
0.800
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
0.600
0.400
0.200
0.000
1
10
100
Collector to Base Voltage VCB (V)
µPA821TC
14.00
12.00
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
f = 1 GHz
10.00
8.00
6.00
4.00
2.00
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN vs. FREQUENCY
25.0
VCE = 3 V
IC = 7 mA
20.0
15.0
10.0
5.0
0.0
0.1
1.0
10.0
Frequency f (GHz)
4
Data Sheet P14552EJ1V0DS00