UPA650TT Datasheet, PDF (4/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µPA650TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
− 15
Pulsed
VGS = −4.5 V
− 10
−5
0
0
−2.5 V
−1.8 V
−1.5 V
− 0.1 − 0.2 −0.3 − 0.4 − 0.5
VDS - Drain to Source Voltage - V
−1
− 0.9
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = −10 V
ID = −1 mA
− 0.8
− 0.7
− 0.6
− 0.5
− 0.4
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
140
VGS = −4.5 V
120 Pulsed
100
TA = 125°C
75°C
80
25°C
−25°C
60
40
20
0
− 0.01
− 0.1
−1
− 10
ID - Drain Current - A
−100
FORWARD TRANSFER CHARACTERISTICS
−100
− 10
−1
− 0.1
VDS = −10 V
Pulsed
TA = 125°C
75°C
25°C
−25°C
− 0.01
− 0.001
− 0.0001
0
− 0.5
−1
− 1.5
−2
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V_DS = −10 V
Pulsed
TA = −25°C
10
25°C
TA = 75°C
125°C
1
0.1
− 0.01
− 0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
140
VGS = −2.5 V
120 ^Pulsed
TA = 125°C
100
75°C
25°C
80
−25°C
60
40
20
0
− 0.01
− 0.1
−1
− 10
ID - Drain Current - A
−100
4
Data Sheet G16202EJ1V0DS