UPA1800 Datasheet, PDF (4/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µ PA1800
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
VGS = 4.0 V
50
TA = 125˚C
40
75˚C
25˚C
30
−25˚C
20
10
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
VGS = 10 V
40
TA = 125˚C
30
75˚C
20
25˚C
−25˚C
10
0
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
ID = 3.0 A
50
40
30
20
10
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
VGS = 4.5 V
50
TA = 125˚C
40
75˚C
30
25˚C
−25˚C
20
10
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
ID = 3.0 A
50
40
VGS = 4.0 V
4.5 V
30
10 V
20
10
0
−50
0
50
100
150
Tch - Channel Temperature -˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
1000
100
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
4
Data Sheet D11407EJ1V0DS00