UPA1703 Datasheet, PDF (4/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
1
0.1
0
Tch = –25 °C
25 °C
75 °C
125 °C
VDS = 10 V
2
4
6
8
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = –25 °C
25 °C
75 °C
10
125 °C
VDS = 10 V
Pulsed
1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
VGS = 4 V
10
VGS = 10 V
0
1
10
100
ID - Drain Current - A
4
µ_PA1703
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
50
40
VGS = 10 V
30
4V
20
10
0
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
20
ID = 5.0 A
10
0
5
10
15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2.0
ID = 1 mA
1.5
1.0
0.5
0
–50
0
50
100 150
Tch - Channel Temperature - °C