PS7802A-1A Datasheet, PDF (4/10 Pages) NEC – 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Diode
Forward Voltage
VF
IF = 5 mA
Reverse Current
IR
VR = 5 V
MOS FET Off-state Leakage Current ILoff VD = 40 V
Output Capacitance
Cout VD = 0 V, f = 1 MHz
Coupled LED On-state Current
IFon
IL = 250 mA
On-state Resistance
Turn-on Time^{*1, 2}
Turn-off Time^{*1, 2}
Ron IF = 5 mA, IL = 250 mA
ton
IF = 5 mA, VO = 5 V, RL = 500 Ω,
toff
PW ≥ 0.5 ms
Isolation Resistance
RI-O
VI-O = 0.5 kVDC
Isolation Capacitance
Equivalent Rise Time^*3
CI-O
ERT
V = 0 V, f = 1 MHz
IF = 5 mA, tr (in) = 25.0 ps,
V = 250 mV, 50 Ω termination
*1 Test Circuit for Switching Time
IF
Pulse Input
VL
Input
PS7802A-1A
MIN. TYP. MAX. Unit
1.1
1.4
V
5.0
μA
0.1
10
nA
11.5
pF
4
mA
1.1
1.6
Ω
0.05
0.25
ms
0.05
0.25
10⁹
Ω
0.3
pF
45
ps
50%
0
Input monitor
Rin
VO monitor
VO = 5 V
Output
RL
ton
90%
10%
toff
*2 The turn-on time and turn-off time are specified as input-pulse width ≥ 0.5 ms.
Be aware that when the device operates with an input-pulse width less than 0.5 ms, the turn-on time and turn-off
time will increase.
*3 ERT (Equivalent Rise Time) measurement
Input
250 mV
90%
10%
tr (in)
ERT = tr (out)2 – tr (in)2
Output 250 mV
90%
tr (out)
10%
4
Data Sheet PN10686EJ02V0DS