NP84N04EHE Datasheet, PDF (4/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
280
240
200
160
120
80
40
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R^D_(V^{S(GonS) =Lim10iteVd)}
ID(pulse)
ID(DC)
LiPmoitweder
DC ^{1 ms}
Dissipation
100
PW ₌
μ_s
10 _μs
1
TC = 25°C
0.1 ^{Single Pulse}
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
800
700
600
500 ^{484 mJ}
372 mJ
400
300
200
IAS = 22 A
61 A
84 A
100 _{70 mJ}
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
0.1
0.01
10 μ
100 μ 1 m
10 m 100 m
1
PW - Pulse Width - s
Rth(ch-C) = 0.75°C/W
Single Pulse
TC = 25°C
10
100 1000
4
Data Sheet D14240EJ7V0DS