NP32N055HLE Datasheet, PDF (4/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NP32N055HLE, NP32N055ILE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
TA = −55˚C
25˚C
75˚C
1
150˚C
175˚C
0.1
0.01
1.0
VDS = 10 V
2.0
3.0
4.0
5.0
6.0
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _Pulsed
VDS = 10 V
10
TA = 175˚C
1
75˚C
25˚C
−55˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
70
60
50
40
VGS = 10 V
5.0 V
4.5 V
30
20
10
0
0.1
1
10
100
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
120
Pulsed
100
VGS =10 V
80
60
5.0 V
40
4.5 V
20
0
01 23 4 5 6 78
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
30
20
ID = 16 A
10
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 µA
2.0
1.0
0
−50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14137EJ3V0DS