NE55410GR Datasheet, PDF (4/13 Pages) California Eastern Labs – N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

NE55410GR
<R> RF CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
Q1
Gain 1 dB Compression Output Power
Drain Efficiency
Linear Gain
PO (1 dB) f = 2 140 MHz, VDS = 28 V,
ηd
IDset = 20 mA
G Note1
L
Q2
Gain 1 dB Compression Output Power
Drain Efficiency
Linear Gain
PO (1 dB) f = 2 140 MHz, VDS = 28 V,
ηd
IDset = 100 mA
G Note2
L
Gain 1 dB Compression Output Power
Drain Efficiency
Linear Gain
PO (1 dB) f = 1 840 MHz, VDS = 28 V,
ηd
IDset = 100 mA
G Note2
L
Q1 + Q2
Gain 1 dB Compression Output Power
Drain Efficiency
Linear Gain
PO (1 dB) f = 880 MHz, VDS = 28 V,
ηd
IDset = 120 mA (Q1 + Q2)
G Note3
L
Gain 1 dB Compression Output Power
Drain Efficiency
PO (1 dB)
ηd
f = 2 140 MHz, VDS = 28 V,
IDset = 120 mA (Q1 + Q2)
Output Power
Linear Gain
Pout
G ^Note4
L
3rd Order Intermodulation Distortion
Drain Efficiency
IM3 f = 2 132.5/2 147.5 MHz, VDS = 28 V,
ηd
2 carrier W-CDMA 3GPP, Test Model1,
64DPCH, 67% Clipping,
IDset = 120 mA (Q1 + Q2),
Ave Pout = 33 dBm
MIN.
−
−
12
−
−
9.5
−
−
−
−
−
−
−
34
39
24
−
−
Notes 1. Pin = 15 dBm
2. Pin = 20 dBm
3. Pin = 5 dBm
4. Pin = 10 dBm
TYP.
35.4
52
13.5
40.4
46
11
40.5
49
14
41.5
55
30
40.0
42
40
25
−40
21
MAX.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
dBm
%
dB
dBm
%
dB
dBm
%
dB
dBm
%
dB
dBm
%
dB
dB
dBc
%
4
Data Sheet PU10542EJ03V0DS