2SK3307 Datasheet, PDF (4/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

FORWARD TRANSFER CHARACTERISTICS
1000 _Pulsed
100
10
TA = −50˚C
25˚C
75˚C
1
150˚C
0.1
1
VDS = 10 V
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
TA = 150˚C
75˚C
25˚C
−50˚C
1
0.1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
VGS = 4.0 V
10
10 V
0
0.1
1
10
100
1000
ID - Drain Current - A
2SK3307
300
250
200
150
100
50
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS =10 V
4.0 V
Pulsed
1
2
3
4
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
10
ID = 35 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = 10 V
ID = 1 mA
2.5
2
1.5
1
0.5
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
4
Data Sheet D14129EJ3V0DS