2SK3113B Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SK3113B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
VGS = 10 V
Pulsed
8V
5
10
15
20
25
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
5
4.5
4
3.5
3
2.5
2
1.5
1
VDS = 10 V
0.5 _{ID = 1 mA}
0
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8.0
Pulsed
7.0
6.0
5.0
4.0
ID = 2.0 A
3.0
1.0 A
2.0
0
5
10
15
20
25
VGS – Gate to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
0
Tch = 125°C
75°C
25°C
−25°C
VDS = 10 V
Pulsed
5 10 15 20 25 30
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10 V
Pulsed
Tch = − 25°C
25°C
1
125°C
0.1
75°C
0.01
0.01
0.1
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
6.0
5.5
5.0
4.5
4.0
3.5
VGS = 10 V
3.0
2.5
2.0
0.01
20 V
0.1
Pulsed
1
10
ID - Drain Current - A
4
Data Sheet D18061EJ3V0DS