2SJ621 Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−12
P uls ed
−4.5 V
−10
−2.5 V
−8
−3.0 V
−6
−1.8 V
−4
−2
0
0
−0.2
−0.4
−0.6
−0.8
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−1.2
VSD = −10 V
ID = −1 m A
−0.7
−0.2
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
100
P u ls e d
80
VGS = −1.8 V
−2.5 V
60
−3.0 V
40
−4.5 V
20
0
-50
0
50
100
150
Tch - Channel Temperature - °C
2SJ621
FORWARD TRANSFER CHARACTERISTICS
−100
−10
VDS = −10 V
P ulsed
−1
−0.1
−0.01
−0.001
TA = −25°C
25°C
75°C
125°C
−0.0001
0
−0.4
−0.8 −1.2
−1.6
−2
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
P u lsed
TA = −25°C
10
25°C
75°C
125°C
1
0.1
−0.01
−0.1
−1
−10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
P u lse d
80
60
40
ID = −2.0 A
20
0
0
−2
−4
−6
−8
VGS - Gate to Source Voltage - V
4
Data Sheet D15634EJ1V0DS