UPA835TF Datasheet, PDF (3/10 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR

TYPICAL PERFORMANCE CURVES (TA = 25˚C)
Q1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
500 µA
50
400 µA
40
300 µA
30
200 µA
20
lB=100 µA
10
0
1
2
3
4
5
6
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
5V
VCE = 3 V
100
0
0.1 0.2 0.5 1 2
5 10 20 50 100
Collector Current, lc (mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
14
f = 2 GHz
12
5V
3V
10
8
VCE = 1 V
6
4
2
0.5
1
2
5
10 20
50
Collector Current, lc (mA)
UPA835TF
Q2
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
lB=160 µA
140 µA
20
120 µA
15
100 µA
80 µA
10
60 µA
40 µA
5
20 µA
0
5
10
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 3 V
100
50
20
10
0.5 1
5 10
50
Collector Current, lc (mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
20
VCE = 3 V
f = 1.0 GHz
10
5
2
1
0.5
1
5
10
50
Collector Current, lc (mA)