UPA1915 Datasheet, PDF (3/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

5 _{TYPICAL CHARACTERISTICS (TA = 25°C)}
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0
30
60
90
120
150
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−18
VGS = −4.5 V
−4.0 V
−12
−2.7 V
−2.5 V
−6
00.0
−0.2
−0.4 −0.6
−0.8 −1.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−1.5 _{VDS = −10 V}
ID = −1 mA
−1.0
−0.5
−50
0
50
100
150
Tch - Channel Temperature - ˚C
µ PA1915
FORWARD BIAS SAFE OPERATING AREA
−100
−10
−1
(R@^DSV(oGnS)
L=im_−^{i4te.5d V)}
ID (DC)
ID
(PpWPuWl=se5P=)Ws10=0P1mW0sm= _1s
ms
−0.1 _{Single Pulse}
Mounted on 250 mm²x 35 µm Copper Pad
Connected to Drain Electrode in
−0.01 ^{50 mm x 50 mm x 1.6 mm FR-4 Board}
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
TRANSFER CHARACTERISTICS
−100 _{VDS = −10 V}
−10
−1
−0.1
−0.01
−0.001
TA = 125˚C
75˚C
25˚C
−25˚C
−0.0001
−0.00001
0
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
100 _{VDS = −10V}
10
TA = 125˚C
1
75˚C
25˚C
−25˚C
0.1
0.01
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
Data Sheet G14761EJ1V0DS00
3