NP83P06PDG Datasheet, PDF (3/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP83P06PDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
-10
ID(pulse)
ID(DC)
DC
RDS(on) Limited
(VGS = −10V)
PW _{= 1i 00 μs}
-1
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
180
150
120
90
60
30
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
-0.1
-0.01
TC = 25°C
Single Pulse
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 1.0°C/Wi
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18691EJ3V0DS
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