NP36P04KDG Datasheet, PDF (3/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP36P04KDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
ID(pulse)
-10
-1
ID(DC)
DC
RDS(on) Limited
(VGS = −10 V)
PW
= _{1i 00 μs}
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
-0.1
-0.01
TC = 25°C
Single Pulse
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 2.68°C/Wi
0.1
0.01
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
Data Sheet D18686EJ3V0DS
3